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Power Transistors
2SD2420
Silicon NPN triple diffusion planer type Darlington
Unit: mm
For power amplification I Features
* High forward current transfer ratio hFE: 2 000 to 10 000 * Dielectric breakdown voltage of the package: > 5 kV
9.90.3
3.00.5
4.60.2 2.90.2
13.70.2 4.20.2 Solder Dip
15.00.5
3.20.1
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 8 4 40 2.0 150 -55 to +150 C C Unit V V V A A W
1.40.2 1.60.2 0.80.1
2.60.1
0.550.15
2.540.30 5.080.50 1 2 3
1: Base 2: Collector 3: Emitter TO-220D Package
Internal Connection
C B
Junction temperature Storage temperature
E
I Electrical Characteristics TC = 25C 3C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Base to emitter voltage (DC value) Collector to emitter saturation voltage VBE VCE(sat)1 VCE(sat)2 Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P Q fT ton tstg tf
*
Conditions VCB = 60 V, IE = 0 VCE = 30 V, IB = 0 VEB = 5 V, IC = 0 IC = 30 mA, IB = 0 VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 3 A, IB1 = 12 mA, IB2 = -12 mA VCC = 50 V
Min
Typ
Max 200 500 2
Unit A A mA V
60 1 000 2 000 10 000 2.5 2.0 4.0 20 0.5 4.0 1.0
V V V MHz s s s
4 000 to 10 000 2 000 to 5 000
1

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